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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW49 DESCRIPTION With TO-3PN package. High current capability. Fast switching speed. Low collector saturation voltage APPLICATIONS Switching regulators. Motor control. High frequency and efficency converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Fig.1 simplified outline (TO-3PN) and symbol INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current Base current (peak) E SEM ANG H Open base OND IC CONDITIONS TOR UC VALUE 160 80 7 30 40 6 10 UNIT V V V A A A A W ae ae Open emitter Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 150 175 -65~175 Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW49 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current Transition frequency CONDITIONS IE=50mA; IC=0 IC=0.2A; IB=0;L=25mH IC=40A; IB=4A IC=30A; IB=3A IC=30A; IB=3A VCE=rated ;VBE=-1.5V TC=125ae VEB=5V; IC=0 VCE=15V,f=15MHz;IC=1A 8 MIN 7 80 1.4 1.2 2.0 1 3 1 TYP. MAX UNIT V V V V V mA mA SYMBOL V(BR)EBO VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEX IEBO fT Switching times : ton ts tf Fall time Turn-on time Storage time CHA IN E SEM NG PARAMETER IC=30A; IB1=- IB2=4A VCC=80V OND IC TOR UC 0.8 1.2 |I 0.6 0.15 1.1 0.25 s |I |I s s THERMAL CHARACTERISTICS SYMBOL Rth j-case Thermal resistance junction case MAX 1 UNIT ae /W 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW49 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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